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| Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 3 15 400 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Transition frequency Noise figure Power gain Common emitter reverse transfer capacitance (Ta=25C) Symbol ICBO ICEO IEBO hFE fT NF PG Cre * Conditions VCB = 10V, IE = 0 VCE = 20V, IB = 0 VEB = 3V, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCE = 6V, IC = 1mA min typ max 100 10 1 4.10.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 Unit nA A A 65 720 450 650 3.3 20 24 0.8 260 mV MHz 5 dB dB 1 pF VBE *h FE Rank classification C 65 ~ 160 D 100 ~ 260 hFE Rank 1 Transistor PC -- Ta 500 12 Ta=25C 450 10 IB=100A 10 2SC2377 IC -- VCE 12 Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 VCE=10V 8 6V 80A 8 60A 6 40A 6 4 4 2 20A 2 0 0 6 12 18 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE=6V 25 25C 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 360 hFE -- IC VCE=6V Forward current transfer ratio hFE 300 Collector current IC (mA) Ta=75C 20 -25C 240 Ta=75C 25C 120 -25C 15 180 10 25C Ta=75C 5 -25C 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 1200 Ta=25C 1000 VCB=10V 800 6V 600 120 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 100 2.0 80 1.6 60 1.2 400 40 0.8 200 20 VCE=6V 10V 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Cob -- VCB 1.2 2SC2377 PG -- IE IE=0 f=1MHz Ta=25C 40 35 f=100MHz Rg=50 Ta=25C VCE=10V 6V 12 NF -- IE f=100MHz Rg=50k Ta=25C Collector output capacitance Cob (pF) 1.0 10 0.8 Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 8 0.6 6 0.4 4 VCE=6V, 10V 0.2 2 0 0 5 10 15 20 25 30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA) bie -- gie 20 18 yie=gie+jbie VCE=10V -4mA bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V -1 -1mA -4mA IE=-7mA 58 -3 bfe -- gfe Forward transfer susceptance bfe (mS) 10.7 25 0 - 0.4mA -1mA 100 58 10.7 25 150 0 Input susceptance bie (mS) 16 14 12 10 8 6 4 25 58 -1mA IE=- 0.5mA -7mA -2mA 100 100 -20 150 -2mA -2 -40 150 100 -4mA 58 -60 f=150MHz IE=-7mA 100 58 25 -4 100 -80 -5 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 2 f=10.7MHz 0 0 3 6 9 12 15 -6 - 0.5 f=150MHz - 0.4 - 0.3 - 0.2 - 0.1 0 -120 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe -- goe IE=- 0.5mA -1mA 1.2 150 -2mA -4mA 100 Output susceptance boe (mS) 1.0 0.8 -7mA 0.6 58 0.4 25 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 yoe=goe+jboe VCE=10V Output conductance goe (mS) 3 |
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